GaAs Wafers Specifications

Diameter (mm)
Conduction range
Dopand
Etch Pit Density
Growth method
Daten
Diameter (mm)
Conduction range
200
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤12,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

675

Notch

Polish

double

Application

HBT

pHEMT

Solar

Diameter (mm)
Conduction range
150
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤10,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

675

Notch

Polish

double

Application

HBT

pHEMT

Solar

Diameter (mm)
Conduction range
150
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤100,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

675

Notch

Polish

double

Application

pHEMT

MESFET

Passives

Solar

Diameter (mm)
Conduction range
150
SI (n-type)
Dopand
Si
Etch Pit Density
≤3,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

675

Flat

Notch

Polish

double

Application

LED

HBLED

Solar

Diameter (mm)
Conduction range
150
SC (p-type)
Dopand
Zn
Etch Pit Density
≤5,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

Flat

Notch

Polish

double

Application

LED

HBLED

Solar

Diameter (mm)
Conduction range
100
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤7,500
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

HBT

pHEMT

Diameter (mm)
Conduction range
100
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤100,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

pHEMT

MESFET

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
Si
Etch Pit Density
≤3,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

Detector

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
Si
Etch Pit Density
≤100
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LASER

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
Zn
Etch Pit Density
≤100,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

450

Flat

Polish

single

Application

LED

Diameter (mm)
Conduction range
100
SC (p-type)
Dopand
Zn
Etch Pit Density
≤3,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

Detector

Solar

Diameter (mm)
Conduction range
3"
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤7,500
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

Diameter (mm)
Conduction range
3"
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤70,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

HBT

pHEMT

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
Si
Etch Pit Density
≤1,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

LASER

Detector

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
Si
Etch Pit Density
≤100
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LASER

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
Te
Etch Pit Density
≤70,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

450

Flat

Polish

single

Application

LED

Standard Dimensions and Tolerances for 150 mm Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 150 +/- 0.5 mm
Thickness, Center Point
Option A 675 +/- 25 µm
Option B 550 +/- 25 µm
Notch Orientation [010] +/- 2 degrees
Notch Depth 1 +0.25/-0.0 mm

Standard Dimensions and Tolerances for 100 mm Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 100 +/- 0.5 mm
Thickness, Center Point 675 +/- 25 µm
Primary Flat Lenght 32.5 +/- 2 mm
Secondary Flat Lenght 18 +/- 2 mm

Standard Dimensions and Tolerances for 200 mm Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 200 +/- 0.5 mm
Thickness, Center Point 675 +/- 25 µm
Notch Orientation [010] +/- 2 degrees
Notch Depth 1 +0.25/-0.0 mm

Standard Dimensions and Tolerances for 3" Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 76.2 +/- 0.5 mm
Thickness, Center Point 625 +/- 25 µm
Primary Flat Lenght 22 +/- 2 mm
Secondary Flat Lenght 11 +/- 2 mm

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Wir verwenden Cookies, um Inhalte und Anzeigen zu personalisieren, Funktionen für soziale Medien anbieten zu können und die Zugriffe auf unsere Website zu analysieren.

Außerdem geben wir Informationen zu Ihrer Verwendung unserer Website an unsere Partner für soziale Medien, Werbung und Analysen weiter. Unsere Partner führen diese Informationen möglicherweise mit weiteren Daten zusammen, die Sie ihnen bereitgestellt haben oder die sie im Rahmen Ihrer Nutzung der Dienste gesammelt haben.

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