GaAs Wafers Specifications

Diameter (mm)
Conduction range
Dopand
Etch Pit Density
Growth method
Daten
Diameter (mm)
Conduction range
200
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤12,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

675

Notch

Polish

double

Application

HBT

pHEMT

Solar

Diameter (mm)
Conduction range
150
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤10,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

675

Notch

Polish

double

Application

HBT

pHEMT

Solar

Diameter (mm)
Conduction range
150
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤100,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

675

Notch

Polish

double

Application

pHEMT

MESFET

Passives

Solar

Diameter (mm)
Conduction range
150
SI (n-type)
Dopand
Si
Etch Pit Density
≤3,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

675

Flat

Notch

Polish

double

Application

LED

HBLED

Solar

Diameter (mm)
Conduction range
150
SC (p-type)
Dopand
Zn
Etch Pit Density
≤5,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

Flat

Notch

Polish

double

Application

LED

HBLED

Solar

Diameter (mm)
Conduction range
100
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤7,500
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

HBT

pHEMT

Diameter (mm)
Conduction range
100
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤100,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

pHEMT

MESFET

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
Si
Etch Pit Density
≤3,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

Detector

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
Si
Etch Pit Density
≤100
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LASER

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
Zn
Etch Pit Density
≤100,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

450

Flat

Polish

single

Application

LED

Diameter (mm)
Conduction range
100
SC (p-type)
Dopand
Zn
Etch Pit Density
≤3,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

Detector

Solar

Diameter (mm)
Conduction range
3"
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤7,500
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

Diameter (mm)
Conduction range
3"
SI (n-type)
Dopand
UN/C
Etch Pit Density
≤70,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

double

Application

HBT

pHEMT

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
Si
Etch Pit Density
≤1,000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

LASER

Detector

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
Si
Etch Pit Density
≤100
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

450

Flat

Polish

single

double

Application

LASER

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
Te
Etch Pit Density
≤70,000
Growth method
LEC
Thickness
Flat/Notch
Polish
Application

450

Flat

Polish

single

Application

LED

Standard Dimensions and Tolerances for 150 mm Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 150 +/- 0.5 mm
Thickness, Center Point
Option A 675 +/- 25 µm
Option B 550 +/- 25 µm
Notch Orientation [010] +/- 2 degrees
Notch Depth 1 +0.25/-0.0 mm

Standard Dimensions and Tolerances for 100 mm Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 100 +/- 0.5 mm
Thickness, Center Point 675 +/- 25 µm
Primary Flat Lenght 32.5 +/- 2 mm
Secondary Flat Lenght 18 +/- 2 mm

Standard Dimensions and Tolerances for 200 mm Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 200 +/- 0.5 mm
Thickness, Center Point 625 +/- 25 µm
Notch Orientation [010] +/- 2 degrees
Notch Depth 1 +0.25/-0.0 mm

Standard Dimensions and Tolerances for 3" Diameter GaAs Wafers

Property Dimension Tolerance Units
Diameter 76.2 +/- 0.5 mm
Thickness, Center Point 625 +/- 25 µm
Primary Flat Lenght 22 +/- 2 mm
Secondary Flat Lenght 11 +/- 2 mm

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