GaN Wafer Spezifikationen

Diameter (mm)
Conduction range
Dopand
Etch Pit Density
Growth method
Daten
Diameter (mm)
Conduction range
2"
SC (n-type)
Dopand
Si/Ge
Etch Pit Density
≤ 5E6
Growth method
HVPE
Thickness
Flat/Notch
Polish
Application

400

Flat

Polish

single

Application

MESFET

LASER

Diameter (mm)
Conduction range
2"
SI (n-type)
Dopand
Mn
Etch Pit Density
≤ 5E6
Growth method
HVPE
Thickness
Flat/Notch
Polish
Application

400

Flat

Polish

single

Application

HBT

Standard Dimensions and Tolerances for 2" Diameter GaN Wafers

Property Target Tolerance Units
Diameter 50.8 +/- 0.3 mm
Thickness, Center Point 400 +/- 25 µm
Primary Flat Length 15.8 +/- 1 mm
Secondary Flat Length 8.0 +/- 1 mm
Surface orientation* (0001) +/- 0.25 deg
Bow, Warp <30 µm
Total thickness variation <20 µm
FWHM (0002, 3mm slit) <50 arcsec

*Off-orientation available

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