InP Wafer Spezifikationen

Diameter (mm)
Conduction range
Dopand
Etch Pit Density
Growth method
Daten
Diameter (mm)
Conduction range
100
SI (n-type)
Dopand
Fe
Etch Pit Density
≤5000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

single

double

Application

HBT

Detector

Solar

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
S
Etch Pit Density
≤500
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

single

double

Application

LED

LASER

Detector

Diameter (mm)
Conduction range
100
SC (n-type)
Dopand
S
Etch Pit Density
≤50
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

single

double

Application

LASER

Detector

Diameter (mm)
Conduction range
3"
SI (n-type)
Dopand
Fe
Etch Pit Density
≤5000
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

single

double

Application

HBT

Detector

Solar

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
S
Etch Pit Density
≤500
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

single

double

Application

LASER

Detector

Diameter (mm)
Conduction range
3"
SC (n-type)
Dopand
S
Etch Pit Density
≤50
Growth method
VGF
Thickness
Flat/Notch
Polish
Application

625

Flat

Polish

single

double

Application

LASER

Detector

Standard Dimensions and Tolerances for 100 mm Diameter InP Wafers

Property Target Tolerance Units
Diameter 100 +/- 0.5 mm
Thickness, Center Point 625 +/- 25 µm
Primary Flat Length 32.5 +/- 2 mm
Secondary Flat Length 18 +/- 2 mm
Flat orientation (standard) US/EJ +/- 0.5 deg
Flat orientation (high precision) US/EJ +/- 0.02 deg
Surface orientation (standard) (100)* +/- 0.3 deg
Surface orientation (high precision) (100)* +/- 0.05 deg

* Off-orientation available

Standard Dimensions and Tolerances for 3" Diameter InP Wafers

Property Target Tolerance Units
Diameter 76.2 +/- 0.5 mm
Thickness, Center Point 625 +/- 25 µm
Primary Flat Length 22 +/- 2 mm
Secondary Flat Length 11 +/- 2 mm
Flat orientation (standard) US/EJ +/- 0.5 deg
Flat orientation (high precision) US/EJ +/- 0.02 deg
Surface orientation (standard) (100)* +/- 0.3 deg
Surface orientation (high precision) (100)* +/- 0.05 deg

* Off-orientation available

Send us your data request for this InP Wafer

(Optional, nur wenn Rückruf gewünscht )
(Optional können Sie uns eine Mitteilung zu ihrer Anfrage notieren)