GaAs Wafer Spezifikationen

Diameter (mm)

Conduction range

Dopand

Etch Pit Density

Growth method

Daten

Diameter (mm)

Conduction range

200

SI (n-type)

Dopand

UN/C

Etch Pit Density

≤12,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

675

Notch

Polish

double

Application

HBT

pHEMT

Solar

Diameter (mm)

Conduction range

150

SI (n-type)

Dopand

UN/C

Etch Pit Density

≤10,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

675

Notch

Polish

double

Application

HBT

pHEMT

Solar

Diameter (mm)

Conduction range

150

SI (n-type)

Dopand

Etch Pit Density

≤3,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

675

Flat

Notch

Polish

double

Application

LED

HBLED

Solar

Diameter (mm)

Conduction range

150

SC (n-type)

Dopand

Etch Pit Density

≤50

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

675

Flat

Notch

Polish

double

Application

LASER

Diameter (mm)

Conduction range

150

SC (p-type)

Dopand

Etch Pit Density

≤5,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

Flat

Notch

Polish

double

Application

LED

HBLED

Solar

Diameter (mm)

Conduction range

100

SI (n-type)

Dopand

UN/C

Etch Pit Density

≤7,500

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

Flat

Polish

double

Application

HBT

pHEMT

Diameter (mm)

Conduction range

100

SI (n-type)

Dopand

UN/C

Etch Pit Density

≤100,000

Growth method

LEC

Thickness

Flat/Notch

Polish

Application

625

Flat

Polish

double

Application

pHEMT

MESFET

Diameter (mm)

Conduction range

100

SC (n-type)

Dopand

Etch Pit Density

≤3,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

Detector

Diameter (mm)

Conduction range

100

SC (n-type)

Dopand

Etch Pit Density

≤100

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

450

Flat

Polish

single

double

Application

LASER

Diameter (mm)

Conduction range

100

SC (n-type)

Dopand

Etch Pit Density

≤100,000

Growth method

LEC

Thickness

Flat/Notch

Polish

Application

450

Flat

Polish

single

Application

LED

Diameter (mm)

Conduction range

100

SC (p-type)

Dopand

Etch Pit Density

≤3,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

Detector

Solar

Diameter (mm)

Conduction range

SI (n-type)

Dopand

UN/C

Etch Pit Density

≤7,500

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

Flat

Polish

double

Application

Diameter (mm)

Conduction range

SI (n-type)

Dopand

UN/C

Etch Pit Density

≤70,000

Growth method

LEC

Thickness

Flat/Notch

Polish

Application

625

Flat

Polish

double

Application

HBT

pHEMT

Diameter (mm)

Conduction range

SC (n-type)

Dopand

Etch Pit Density

≤1,000

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

450

Flat

Polish

single

double

Application

LED

HBLED

LASER

Detector

Diameter (mm)

Conduction range

SC (n-type)

Dopand

Etch Pit Density

≤100

Growth method

VGF

Thickness

Flat/Notch

Polish

Application

625

450

Flat

Polish

single

double

Application

LASER

Diameter (mm)

Conduction range

SC (n-type)

Dopand

Etch Pit Density

≤70,000

Growth method

LEC

Thickness

Flat/Notch

Polish

Application

450

Flat

Polish

single

Application

LED

Standard Dimensions and Tolerances for 150 mm Diameter GaAs Wafers

Property	Dimension	Tolerance	Units
Diameter	150	+/- 0.5	mm
Thickness, Center Point
Option A	675	+/- 25	µm
Option B	550	+/- 25	µm
Notch Orientation	[010]	+/- 2	degrees
Notch Depth	1	+0.25/-0.0	mm

Standard Dimensions and Tolerances for 100 mm Diameter GaAs Wafers

Property	Dimension	Tolerance	Units
Diameter	100	+/- 0.5	mm
Thickness, Center Point	675	+/- 25	µm
Primary Flat Lenght	32.5	+/- 2	mm
Secondary Flat Lenght	18	+/- 2	mm

Standard Dimensions and Tolerances for 200 mm Diameter GaAs Wafers

Property	Dimension	Tolerance	Units
Diameter	200	+/- 0.5	mm
Thickness, Center Point	675	+/- 25	µm
Notch Orientation	[010]	+/- 2	degrees
Notch Depth	1	+0.25/-0.0	mm

Standard Dimensions and Tolerances for 3" Diameter GaAs Wafers

Property	Dimension	Tolerance	Units
Diameter	76.2	+/- 0.5	mm
Thickness, Center Point	625	+/- 25	µm
Primary Flat Lenght	22	+/- 2	mm
Secondary Flat Lenght	11	+/- 2	mm

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