GaAs Wafer Specifications

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Specifications for 200 mm diameter GaAs Wafers

Conductivity Type, Doping, and Growth Method

The 200 GaAs Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SI (n-type) conductivity and UN/C doping:

    • Etch Pit Density: ≤12,000
    • Growth method: VGF
    • Thickness: 675
    • Flat/Notch: Notch
    • Polish: double
    • Application: HBT, pHEMT, Solar

Specifications for 150 mm diameter GaAs Wafers

Conductivity Type, Doping, and Growth Method

The 150 GaAs Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SI (n-type) conductivity and UN/C doping:

    • Etch Pit Density: ≤10,000
    • Growth method: VGF
    • Thickness: 675
    • Flat/Notch: Notch
    • Polish: double
    • Application: HBT, pHEMT, Solar

  2. Wafers with SC (n-type) conductivity and Si doping:

    • Etch Pit Density: ≤3,000
    • Growth method: VGF
    • Thickness: 675
    • Flat/Notch: Flat, Notch
    • Polish: double
    • Application: LED, HBLED, Solar

  3. Wafers with SC (n-type) conductivity and Si doping:

    • Etch Pit Density: ≤50
    • Growth method: VGF
    • Thickness: 675
    • Flat/Notch: Flat, Notch
    • Polish: double
    • Application: LASER

  4. Wafers with SC (p-type) conductivity and Zn doping:

    • Etch Pit Density: ≤5,000
    • Growth method: VGF
    • Thickness:
    • Flat/Notch: Flat, Notch
    • Polish: double
    • Application: LED, HBLED, Solar

Specifications for 100 mm diameter GaAs Wafers

Conductivity Type, Doping, and Growth Method

The 100 GaAs Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SI (n-type) conductivity and UN/C doping:

    • Etch Pit Density: ≤7,500
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: double
    • Application: HBT, pHEMT

  2. Wafers with SI (n-type) conductivity and UN/C doping:

    • Etch Pit Density: ≤100,000
    • Growth method: LEC
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: double
    • Application: pHEMT, MESFET

  3. Wafers with SC (n-type) conductivity and Si doping:

    • Etch Pit Density: ≤3,000
    • Growth method: VGF
    • Thickness: 625, 450
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LED, HBLED, Detector

  4. Wafers with SC (n-type) conductivity and Si doping:

    • Etch Pit Density: ≤100
    • Growth method: VGF
    • Thickness: 625, 450
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LASER

  5. Wafers with SC (n-type) conductivity and Te doping:

    • Etch Pit Density: ≤100,000
    • Growth method: LEC
    • Thickness: 450
    • Flat/Notch: Flat
    • Polish: single
    • Application: LED

  6. Wafers with SC (p-type) conductivity and Zn doping:

    • Etch Pit Density: ≤3,000
    • Growth method: VGF
    • Thickness: 625, 450
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LED, HBLED, Detector, Solar

Specifications for 3 mm diameter GaAs Wafers

Conductivity Type, Doping, and Growth Method

The 3 GaAs Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SI (n-type) conductivity and UN/C doping:

    • Etch Pit Density: ≤7,500
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: double
    • Application:

  2. Wafers with SI (n-type) conductivity and UN/C doping:

    • Etch Pit Density: ≤70,000
    • Growth method: LEC
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: double
    • Application: HBT, pHEMT

  3. Wafers with SC (n-type) conductivity and Si doping:

    • Etch Pit Density: ≤1,000
    • Growth method: VGF
    • Thickness: 625, 450
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LED, HBLED, LASER, Detector

  4. Wafers with SC (n-type) conductivity and Si doping:

    • Etch Pit Density: ≤100
    • Growth method: VGF
    • Thickness: 625, 450
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LASER

  5. Wafers with SC (n-type) conductivity and Te doping:

    • Etch Pit Density: ≤70,000
    • Growth method: LEC
    • Thickness: 450
    • Flat/Notch: Flat
    • Polish: single
    • Application: LED

Standard Dimensions and Tolerances for 150 mm Diameter GaAs Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 150 mm, Tolerance: +/- 0.5 mm
  • Thickness, Center Point: , Tolerance:
  • Option A: 675 µm, Tolerance: +/- 25 µm
  • Option B: 550 µm, Tolerance: +/- 25 µm
  • Notch Orientation: [010] degrees, Tolerance: +/- 2 degrees
  • Notch Depth: 1 mm, Tolerance: +0.25/-0.0 mm

Standard Dimensions and Tolerances for 100 mm Diameter GaAs Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 100 mm, Tolerance: +/- 0.5 mm
  • Thickness, Center Point: 675 µm, Tolerance: +/- 25 µm
  • Primary Flat Lenght: 32.5 mm, Tolerance: +/- 2 mm
  • Secondary Flat Lenght: 18 mm, Tolerance: +/- 2 mm

Standard Dimensions and Tolerances for 200 mm Diameter GaAs Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 200 mm, Tolerance: +/- 0.5 mm
  • Thickness, Center Point: 675 µm, Tolerance: +/- 25 µm
  • Notch Orientation: [010] degrees, Tolerance: +/- 2 degrees
  • Notch Depth: 1 mm, Tolerance: +0.25/-0.0 mm

Standard Dimensions and Tolerances for 3" Diameter GaAs Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 76.2 mm, Tolerance: +/- 0.5 mm
  • Thickness, Center Point: 625 µm, Tolerance: +/- 25 µm
  • Primary Flat Lenght: 22 mm, Tolerance: +/- 2 mm
  • Secondary Flat Lenght: 11 mm, Tolerance: +/- 2 mm