GaN Wafer Specifications

Tabular view of the specifications

Specifications for 2 mm diameter GaN Wafers

Conductivity Type, Doping, and Growth Method

The 2 GaN Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SC (n-type) conductivity and Si/Ge doping:

    • Etch Pit Density: ≤ 5E6
    • Growth method: HVPE
    • Thickness: 400
    • Flat/Notch: Flat
    • Polish: single
    • Application: MESFET, LASER

  2. Wafers with SI (n-type) conductivity and Mn doping:

    • Etch Pit Density: ≤ 5E6
    • Growth method: HVPE
    • Thickness: 400
    • Flat/Notch: Flat
    • Polish: single
    • Application: HBT

Standard Dimensions and Tolerances for 2" Diameter GaN Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 50.8 mm, Tolerance: +/- 0.3 mm
  • Thickness, Center Point: 400 µm, Tolerance: +/- 25 µm
  • Primary Flat Length: 15.8 mm, Tolerance: +/- 1 mm
  • Secondary Flat Length: 8.0 mm, Tolerance: +/- 1 mm
  • Surface orientation*: (0001) deg, Tolerance: +/- 0.25 deg
  • Bow, Warp: <30 µm, Tolerance: µm
  • Total thickness variation: <20 µm, Tolerance: µm
  • FWHM (0002, 3mm slit): <50 arcsec, Tolerance: arcsec