| Diameter (mm) | Conduction range | Dopand | Etch Pit Density | Growth method | Data | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 100 | SI (n-type) | Fe | ≤5000 | VGF | |||||||||
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| 100 | SC (n-type) | S | ≤500 | VGF | |||||||||
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| 100 | SC (n-type) | S | ≤50 | VGF | |||||||||
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| 3" | SI (n-type) | Fe | ≤5000 | VGF | |||||||||
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| 3" | SC (n-type) | S | ≤500 | VGF | |||||||||
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| 3" | SC (n-type) | S | ≤50 | VGF | |||||||||
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Standard Dimensions and Tolerances for 100 mm Diameter InP Wafers
| Property | Target | Tolerance | Units |
|---|---|---|---|
| Diameter | 100 | +/- 0.5 | mm |
| Thickness, Center Point | 625 | +/- 25 | µm |
| Primary Flat Length | 32.5 | +/- 2 | mm |
| Secondary Flat Length | 18 | +/- 2 | mm |
| Flat orientation (standard) | US/EJ | +/- 0.5 | deg |
| Flat orientation (high precision) | US/EJ | +/- 0.02 | deg |
| Surface orientation (standard) | (100)* | +/- 0.3 | deg |
| Surface orientation (high precision) | (100)* | +/- 0.05 | deg |
* Off-orientation available
Standard Dimensions and Tolerances for 3" Diameter InP Wafers
| Property | Target | Tolerance | Units |
|---|---|---|---|
| Diameter | 76.2 | +/- 0.5 | mm |
| Thickness, Center Point | 625 | +/- 25 | µm |
| Primary Flat Length | 22 | +/- 2 | mm |
| Secondary Flat Length | 11 | +/- 2 | mm |
| Flat orientation (standard) | US/EJ | +/- 0.5 | deg |
| Flat orientation (high precision) | US/EJ | +/- 0.02 | deg |
| Surface orientation (standard) | (100)* | +/- 0.3 | deg |
| Surface orientation (high precision) | (100)* | +/- 0.05 | deg |
* Off-orientation available