| Diameter (mm) |
Conduction range |
Dopand |
Etch Pit Density |
Growth method |
Data |
| Diameter (mm) |
Conduction range |
| 200 |
SI (n-type) |
Dopand
UN/C
|
Etch Pit Density
≤12,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 150 |
SI (n-type) |
Dopand
UN/C
|
Etch Pit Density
≤10,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 150 |
SC (n-type) |
Dopand
Si
|
Etch Pit Density
≤3,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 150 |
SC (n-type) |
Dopand
Si
|
Etch Pit Density
≤50
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 150 |
SC (p-type) |
Dopand
Zn
|
Etch Pit Density
≤5,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 100 |
SI (n-type) |
Dopand
UN/C
|
Etch Pit Density
≤7,500
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 100 |
SI (n-type) |
Dopand
UN/C
|
Etch Pit Density
≤100,000
|
Growth method
LEC
|
|
| Diameter (mm) |
Conduction range |
| 100 |
SC (n-type) |
Dopand
Si
|
Etch Pit Density
≤3,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 100 |
SC (n-type) |
Dopand
Si
|
Etch Pit Density
≤100
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 100 |
SC (n-type) |
Dopand
Te
|
Etch Pit Density
≤100,000
|
Growth method
LEC
|
|
| Diameter (mm) |
Conduction range |
| 100 |
SC (p-type) |
Dopand
Zn
|
Etch Pit Density
≤3,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 3" |
SI (n-type) |
Dopand
UN/C
|
Etch Pit Density
≤7,500
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 3" |
SI (n-type) |
Dopand
UN/C
|
Etch Pit Density
≤70,000
|
Growth method
LEC
|
|
| Diameter (mm) |
Conduction range |
| 3" |
SC (n-type) |
Dopand
Si
|
Etch Pit Density
≤1,000
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 3" |
SC (n-type) |
Dopand
Si
|
Etch Pit Density
≤100
|
Growth method
VGF
|
|
| Diameter (mm) |
Conduction range |
| 3" |
SC (n-type) |
Dopand
Te
|
Etch Pit Density
≤70,000
|
Growth method
LEC
|
|
Standard Dimensions and Tolerances for 150 mm Diameter GaAs Wafers
| Property |
Dimension |
Tolerance |
Units |
| Diameter |
150 |
+/- 0.5 |
mm |
| Thickness, Center Point |
|
|
|
| Option A |
675 |
+/- 25 |
µm |
| Option B |
550 |
+/- 25 |
µm |
| Notch Orientation |
[010] |
+/- 2 |
degrees |
| Notch Depth |
1 |
+0.25/-0.0 |
mm |
Standard Dimensions and Tolerances for 100 mm Diameter GaAs Wafers
| Property |
Dimension |
Tolerance |
Units |
|---|
| Diameter |
100 |
+/- 0.5 |
mm |
| Thickness, Center Point |
675 |
+/- 25 |
µm |
| Primary Flat Lenght |
32.5 |
+/- 2 |
mm |
| Secondary Flat Lenght |
18 |
+/- 2 |
mm |
Standard Dimensions and Tolerances for 200 mm Diameter GaAs Wafers
| Property |
Dimension |
Tolerance |
Units |
|---|
| Diameter |
200 |
+/- 0.5 |
mm |
| Thickness, Center Point |
675 |
+/- 25 |
µm |
| Notch Orientation |
[010] |
+/- 2 |
degrees |
| Notch Depth |
1 |
+0.25/-0.0 |
mm |
Standard Dimensions and Tolerances for 3" Diameter GaAs Wafers
| Property |
Dimension |
Tolerance |
Units |
|---|
| Diameter |
76.2 |
+/- 0.5 |
mm |
| Thickness, Center Point |
625 |
+/- 25 |
µm |
| Primary Flat Lenght |
22 |
+/- 2 |
mm |
| Secondary Flat Lenght |
11 |
+/- 2 |
mm |