GaN Wafer Specifications

Accessible view of the specifications
Diameter (mm) Conduction range Dopand Etch Pit Density Growth method Data
2" SC (n-type) Si/Ge ≤ 5E6 HVPE
Thickness Flat/Notch Polish Application

400

Flat

single

MESFET

LASER

2" SI (n-type) Mn ≤ 5E6 HVPE
Thickness Flat/Notch Polish Application

400

Flat

single

HBT

Standard Dimensions and Tolerances for 2" Diameter GaN Wafers

Property Target Tolerance Units
Diameter 50.8 +/- 0.3 mm
Thickness, Center Point 400 +/- 25 µm
Primary Flat Length 15.8 +/- 1 mm
Secondary Flat Length 8.0 +/- 1 mm
Surface orientation* (0001) +/- 0.25 deg
Bow, Warp <30 µm
Total thickness variation <20 µm
FWHM (0002, 3mm slit) <50 arcsec

*Off-orientation available

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